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Global Ferroelectric Random Access Memory Market Research Report 2024
Synopsis
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.
FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).
A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary "0"s and "1"s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a "1" is encoded using the negative remnant polarization "-Pr", and a "0" is encoded using the positive remnant polarization "+Pr".In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the "up" or "down" orientation (depending on the polarity of the charge), thereby storing a "1" or "0". Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say "0". If the cell already held a "0", nothing will happen in the output lines. If the cell held a "1", the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the "down" side. The presence of this pulse means the cell held a "1". Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.
The global Ferroelectric Random Access Memory market was valued at US$ 273 million in 2023 and is anticipated to reach US$ 356.4 million by 2030, witnessing a CAGR of 3.8% during the forecast period 2024-2030.
The major players in global Ferroelectric RAM market include Ramtron, Fujistu, etc. The top 2 players occupy about 85% shares of the global market. North America and China are main markets, they occupy about 60% of the global market. Serial Memory is the main type, with a share about 60%. Smart Meters and Medical Devices are main applications, which hold a share about 50%.
This report aims to provide a comprehensive presentation of the global market for Ferroelectric Random Access Memory, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Ferroelectric Random Access Memory.
Report Scope
The Ferroelectric Random Access Memory market size, estimations, and forecasts are provided in terms of output/shipments (K Units) and revenue ($ millions), considering 2023 as the base year, with history and forecast data for the period from 2019 to 2030. This report segments the global Ferroelectric Random Access Memory market comprehensively. Regional market sizes, concerning products by Type, by Application, and by players, are also provided.
For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.
The report will help the Ferroelectric Random Access Memory manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by Type, by Application, and by regions.
Market Segmentation
By Company
Cypress Semiconductor Corporations
Texas Instruments
International Business Machines
Toshiba Corporation
Infineon Technologies Inc
LAPIS Semiconductor Co
Fujitsu Ltd
Segment by Type
16K
32K
64K
Others
Segment by Application
Electronics
Aerospace
Others
Production by Region
North America
Europe
China
Japan
South Korea
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
China Taiwan
Southeast Asia
India
Latin America, Middle East & Africa
Mexico
Brazil
Turkey
GCC Countries
Chapter Outline
Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by region, by Type, by Application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.
Chapter 2: Detailed analysis of Ferroelectric Random Access Memory manufacturers competitive landscape, price, production and value market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Production/output, value of Ferroelectric Random Access Memory by region/country. It provides a quantitative analysis of the market size and development potential of each region in the next six years.
Chapter 4: Consumption of Ferroelectric Random Access Memory in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.
Chapter 5: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 6: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: The main points and conclusions of the report.
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.
FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).
A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary "0"s and "1"s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a "1" is encoded using the negative remnant polarization "-Pr", and a "0" is encoded using the positive remnant polarization "+Pr".In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the "up" or "down" orientation (depending on the polarity of the charge), thereby storing a "1" or "0". Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say "0". If the cell already held a "0", nothing will happen in the output lines. If the cell held a "1", the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the "down" side. The presence of this pulse means the cell held a "1". Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.
The global Ferroelectric Random Access Memory market was valued at US$ 273 million in 2023 and is anticipated to reach US$ 356.4 million by 2030, witnessing a CAGR of 3.8% during the forecast period 2024-2030.
The major players in global Ferroelectric RAM market include Ramtron, Fujistu, etc. The top 2 players occupy about 85% shares of the global market. North America and China are main markets, they occupy about 60% of the global market. Serial Memory is the main type, with a share about 60%. Smart Meters and Medical Devices are main applications, which hold a share about 50%.
This report aims to provide a comprehensive presentation of the global market for Ferroelectric Random Access Memory, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Ferroelectric Random Access Memory.
Report Scope
The Ferroelectric Random Access Memory market size, estimations, and forecasts are provided in terms of output/shipments (K Units) and revenue ($ millions), considering 2023 as the base year, with history and forecast data for the period from 2019 to 2030. This report segments the global Ferroelectric Random Access Memory market comprehensively. Regional market sizes, concerning products by Type, by Application, and by players, are also provided.
For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.
The report will help the Ferroelectric Random Access Memory manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by Type, by Application, and by regions.
Market Segmentation
By Company
Cypress Semiconductor Corporations
Texas Instruments
International Business Machines
Toshiba Corporation
Infineon Technologies Inc
LAPIS Semiconductor Co
Fujitsu Ltd
Segment by Type
16K
32K
64K
Others
Segment by Application
Electronics
Aerospace
Others
Production by Region
North America
Europe
China
Japan
South Korea
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
China Taiwan
Southeast Asia
India
Latin America, Middle East & Africa
Mexico
Brazil
Turkey
GCC Countries
Chapter Outline
Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by region, by Type, by Application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.
Chapter 2: Detailed analysis of Ferroelectric Random Access Memory manufacturers competitive landscape, price, production and value market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Production/output, value of Ferroelectric Random Access Memory by region/country. It provides a quantitative analysis of the market size and development potential of each region in the next six years.
Chapter 4: Consumption of Ferroelectric Random Access Memory in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.
Chapter 5: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 6: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: The main points and conclusions of the report.
Index1 Ferroelectric Random Access Memory Market Overview
1.1 Product Definition
1.2 Ferroelectric Random Access Memory Segment by Type
1.2.1 Global Ferroelectric Random Access Memory Market Value Growth Rate Analysis by Type 2023 VS 2030
1.2.2 16K
1.2.3 32K
1.2.4 64K
1.2.5 Others
1.3 Ferroelectric Random Access Memory Segment by Application
1.3.1 Global Ferroelectric Random Access Memory Market Value Growth Rate Analysis by Application: 2023 VS 2030
1.3.2 Electronics
1.3.3 Aerospace
1.3.4 Others
1.4 Global Market Growth Prospects
1.4.1 Global Ferroelectric Random Access Memory Production Value Estimates and Forecasts (2019-2030)
1.4.2 Global Ferroelectric Random Access Memory Production Capacity Estimates and Forecasts (2019-2030)
1.4.3 Global Ferroelectric Random Access Memory Production Estimates and Forecasts (2019-2030)
1.4.4 Global Ferroelectric Random Access Memory Market Average Price Estimates and Forecasts (2019-2030)
1.5 Assumptions and Limitations
2 Market Competition by Manufacturers
2.1 Global Ferroelectric Random Access Memory Production Market Share by Manufacturers (2019-2024)
2.2 Global Ferroelectric Random Access Memory Production Value Market Share by Manufacturers (2019-2024)
2.3 Global Key Players of Ferroelectric Random Access Memory, Industry Ranking, 2022 VS 2023 VS 2024
2.4 Global Ferroelectric Random Access Memory Market Share by Company Type (Tier 1, Tier 2 and Tier 3)
2.5 Global Ferroelectric Random Access Memory Average Price by Manufacturers (2019-2024)
2.6 Global Key Manufacturers of Ferroelectric Random Access Memory, Manufacturing Base Distribution and Headquarters
2.7 Global Key Manufacturers of Ferroelectric Random Access Memory, Product Offered and Application
2.8 Global Key Manufacturers of Ferroelectric Random Access Memory, Date of Enter into This Industry
2.9 Ferroelectric Random Access Memory Market Competitive Situation and Trends
2.9.1 Ferroelectric Random Access Memory Market Concentration Rate
2.9.2 Global 5 and 10 Largest Ferroelectric Random Access Memory Players Market Share by Revenue
2.10 Mergers & Acquisitions, Expansion
3 Ferroelectric Random Access Memory Production by Region
3.1 Global Ferroelectric Random Access Memory Production Value Estimates and Forecasts by Region: 2019 VS 2023 VS 2030
3.2 Global Ferroelectric Random Access Memory Production Value by Region (2019-2030)
3.2.1 Global Ferroelectric Random Access Memory Production Value Market Share by Region (2019-2024)
3.2.2 Global Forecasted Production Value of Ferroelectric Random Access Memory by Region (2025-2030)
3.3 Global Ferroelectric Random Access Memory Production Estimates and Forecasts by Region: 2019 VS 2023 VS 2030
3.4 Global Ferroelectric Random Access Memory Production by Region (2019-2030)
3.4.1 Global Ferroelectric Random Access Memory Production Market Share by Region (2019-2024)
3.4.2 Global Forecasted Production of Ferroelectric Random Access Memory by Region (2025-2030)
3.5 Global Ferroelectric Random Access Memory Market Price Analysis by Region (2019-2024)
3.6 Global Ferroelectric Random Access Memory Production and Value, Year-over-Year Growth
3.6.1 North America Ferroelectric Random Access Memory Production Value Estimates and Forecasts (2019-2030)
3.6.2 Europe Ferroelectric Random Access Memory Production Value Estimates and Forecasts (2019-2030)
3.6.3 China Ferroelectric Random Access Memory Production Value Estimates and Forecasts (2019-2030)
3.6.4 Japan Ferroelectric Random Access Memory Production Value Estimates and Forecasts (2019-2030)
3.6.5 South Korea Ferroelectric Random Access Memory Production Value Estimates and Forecasts (2019-2030)
4 Ferroelectric Random Access Memory Consumption by Region
4.1 Global Ferroelectric Random Access Memory Consumption Estimates and Forecasts by Region: 2019 VS 2023 VS 2030
4.2 Global Ferroelectric Random Access Memory Consumption by Region (2019-2030)
4.2.1 Global Ferroelectric Random Access Memory Consumption by Region (2019-2024)
4.2.2 Global Ferroelectric Random Access Memory Forecasted Consumption by Region (2025-2030)
4.3 North America
4.3.1 North America Ferroelectric Random Access Memory Consumption Growth Rate by Country: 2019 VS 2023 VS 2030
4.3.2 North America Ferroelectric Random Access Memory Consumption by Country (2019-2030)
4.3.3 U.S.
4.3.4 Canada
4.4 Europe
4.4.1 Europe Ferroelectric Random Access Memory Consumption Growth Rate by Country: 2019 VS 2023 VS 2030
4.4.2 Europe Ferroelectric Random Access Memory Consumption by Country (2019-2030)
4.4.3 Germany
4.4.4 France
4.4.5 U.K.
4.4.6 Italy
4.4.7 Russia
4.5 Asia Pacific
4.5.1 Asia Pacific Ferroelectric Random Access Memory Consumption Growth Rate by Region: 2019 VS 2023 VS 2030
4.5.2 Asia Pacific Ferroelectric Random Access Memory Consumption by Region (2019-2030)
4.5.3 China
4.5.4 Japan
4.5.5 South Korea
4.5.6 China Taiwan
4.5.7 Southeast Asia
4.5.8 India
4.6 Latin America, Middle East & Africa
4.6.1 Latin America, Middle East & Africa Ferroelectric Random Access Memory Consumption Growth Rate by Country: 2019 VS 2023 VS 2030
4.6.2 Latin America, Middle East & Africa Ferroelectric Random Access Memory Consumption by Country (2019-2030)
4.6.3 Mexico
4.6.4 Brazil
4.6.5 Turkey
5 Segment by Type
5.1 Global Ferroelectric Random Access Memory Production by Type (2019-2030)
5.1.1 Global Ferroelectric Random Access Memory Production by Type (2019-2024)
5.1.2 Global Ferroelectric Random Access Memory Production by Type (2025-2030)
5.1.3 Global Ferroelectric Random Access Memory Production Market Share by Type (2019-2030)
5.2 Global Ferroelectric Random Access Memory Production Value by Type (2019-2030)
5.2.1 Global Ferroelectric Random Access Memory Production Value by Type (2019-2024)
5.2.2 Global Ferroelectric Random Access Memory Production Value by Type (2025-2030)
5.2.3 Global Ferroelectric Random Access Memory Production Value Market Share by Type (2019-2030)
5.3 Global Ferroelectric Random Access Memory Price by Type (2019-2030)
6 Segment by Application
6.1 Global Ferroelectric Random Access Memory Production by Application (2019-2030)
6.1.1 Global Ferroelectric Random Access Memory Production by Application (2019-2024)
6.1.2 Global Ferroelectric Random Access Memory Production by Application (2025-2030)
6.1.3 Global Ferroelectric Random Access Memory Production Market Share by Application (2019-2030)
6.2 Global Ferroelectric Random Access Memory Production Value by Application (2019-2030)
6.2.1 Global Ferroelectric Random Access Memory Production Value by Application (2019-2024)
6.2.2 Global Ferroelectric Random Access Memory Production Value by Application (2025-2030)
6.2.3 Global Ferroelectric Random Access Memory Production Value Market Share by Application (2019-2030)
6.3 Global Ferroelectric Random Access Memory Price by Application (2019-2030)
7 Key Companies Profiled
7.1 Cypress Semiconductor Corporations
7.1.1 Cypress Semiconductor Corporations Ferroelectric Random Access Memory Corporation Information
7.1.2 Cypress Semiconductor Corporations Ferroelectric Random Access Memory Product Portfolio
7.1.3 Cypress Semiconductor Corporations Ferroelectric Random Access Memory Production, Value, Price and Gross Margin (2019-2024)
7.1.4 Cypress Semiconductor Corporations Main Business and Markets Served
7.1.5 Cypress Semiconductor Corporations Recent Developments/Updates
7.2 Texas Instruments
7.2.1 Texas Instruments Ferroelectric Random Access Memory Corporation Information
7.2.2 Texas Instruments Ferroelectric Random Access Memory Product Portfolio
7.2.3 Texas Instruments Ferroelectric Random Access Memory Production, Value, Price and Gross Margin (2019-2024)
7.2.4 Texas Instruments Main Business and Markets Served
7.2.5 Texas Instruments Recent Developments/Updates
7.3 International Business Machines
7.3.1 International Business Machines Ferroelectric Random Access Memory Corporation Information
7.3.2 International Business Machines Ferroelectric Random Access Memory Product Portfolio
7.3.3 International Business Machines Ferroelectric Random Access Memory Production, Value, Price and Gross Margin (2019-2024)
7.3.4 International Business Machines Main Business and Markets Served
7.3.5 International Business Machines Recent Developments/Updates
7.4 Toshiba Corporation
7.4.1 Toshiba Corporation Ferroelectric Random Access Memory Corporation Information
7.4.2 Toshiba Corporation Ferroelectric Random Access Memory Product Portfolio
7.4.3 Toshiba Corporation Ferroelectric Random Access Memory Production, Value, Price and Gross Margin (2019-2024)
7.4.4 Toshiba Corporation Main Business and Markets Served
7.4.5 Toshiba Corporation Recent Developments/Updates
7.5 Infineon Technologies Inc
7.5.1 Infineon Technologies Inc Ferroelectric Random Access Memory Corporation Information
7.5.2 Infineon Technologies Inc Ferroelectric Random Access Memory Product Portfolio
7.5.3 Infineon Technologies Inc Ferroelectric Random Access Memory Production, Value, Price and Gross Margin (2019-2024)
7.5.4 Infineon Technologies Inc Main Business and Markets Served
7.5.5 Infineon Technologies Inc Recent Developments/Updates
7.6 LAPIS Semiconductor Co
7.6.1 LAPIS Semiconductor Co Ferroelectric Random Access Memory Corporation Information
7.6.2 LAPIS Semiconductor Co Ferroelectric Random Access Memory Product Portfolio
7.6.3 LAPIS Semiconductor Co Ferroelectric Random Access Memory Production, Value, Price and Gross Margin (2019-2024)
7.6.4 LAPIS Semiconductor Co Main Business and Markets Served
7.6.5 LAPIS Semiconductor Co Recent Developments/Updates
7.7 Fujitsu Ltd
7.7.1 Fujitsu Ltd Ferroelectric Random Access Memory Corporation Information
7.7.2 Fujitsu Ltd Ferroelectric Random Access Memory Product Portfolio
7.7.3 Fujitsu Ltd Ferroelectric Random Access Memory Production, Value, Price and Gross Margin (2019-2024)
7.7.4 Fujitsu Ltd Main Business and Markets Served
7.7.5 Fujitsu Ltd Recent Developments/Updates
8 Industry Chain and Sales Channels Analysis
8.1 Ferroelectric Random Access Memory Industry Chain Analysis
8.2 Ferroelectric Random Access Memory Key Raw Materials
8.2.1 Key Raw Materials
8.2.2 Raw Materials Key Suppliers
8.3 Ferroelectric Random Access Memory Production Mode & Process
8.4 Ferroelectric Random Access Memory Sales and Marketing
8.4.1 Ferroelectric Random Access Memory Sales Channels
8.4.2 Ferroelectric Random Access Memory Distributors
8.5 Ferroelectric Random Access Memory Customers
9 Ferroelectric Random Access Memory Market Dynamics
9.1 Ferroelectric Random Access Memory Industry Trends
9.2 Ferroelectric Random Access Memory Market Drivers
9.3 Ferroelectric Random Access Memory Market Challenges
9.4 Ferroelectric Random Access Memory Market Restraints
10 Research Finding and Conclusion
11 Methodology and Data Source
11.1 Methodology/Research Approach
11.1.1 Research Programs/Design
11.1.2 Market Size Estimation
11.1.3 Market Breakdown and Data Triangulation
11.2 Data Source
11.2.1 Secondary Sources
11.2.2 Primary Sources
11.3 Author List
11.4 Disclaimer
Published By : QY Research
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