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Global SiC Substrates Market Research Report 2024
Synopsis
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.
SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.
Alpha silicon carbide (α-SiC) is the most commonly encountered polymorph; it is formed at temperatures greater than 1700 °C and has a hexagonal crystal structure (similar to Wurtzite). The beta modification (β-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperatures below 1700 °C. Until recently, the beta form has had relatively few commercial uses, although there is now increasing interest in its use as a support for heterogeneous catalysts, owing to its higher surface area compared to the alpha form.
For now, the main application of silicon carbide substrate in LED solid-state lighting field and high-frequency devices
As the basic material of the third generation semiconductor industry, silicon carbide substrate has a high application prospect and industrial value, and has an important strategic position in the development of China's semiconductor industry. For a long time, the core technology and market of silicon carbide substrate are basically monopolized by developed countries in Europe and the United States, and the larger the product size, the higher the level of technical parameters, the more obvious its technical advantages. China's silicon carbide crystal research only started in the late 1990s, and failed to achieve industrialization due to technical bottlenecks and capacity limits in the early stage of development, which is far behind the international advanced level. Since the beginning of the 21st century, under the support and guidance of the national industrial policy, the development of China's silicon carbide wafer industry has been greatly accelerated. Excellent silicon carbide substrate manufacturing enterprises with independent intellectual property rights such as Tianke Heda and Shandong Tianyue have emerged successively. Domestic enterprises to technology-driven development, deep cultivation of silicon carbide wafer and crystal manufacturing, gradually master 2 inches to 6 inches of silicon carbide crystal and wafer manufacturing technology, break the domestic silicon carbide wafer manufacturing technology gap and gradually narrow the technology gap with the developed countries.
The global SiC Substrates market was valued at US$ 567.4 million in 2023 and is anticipated to reach US$ 1824 million by 2030, witnessing a CAGR of 17.6% during the forecast period 2024-2030.
Global core SiC substrates players include Cree (Wolfspeed), II-VI Advanced Materials and ROHM etc. The top 5 companies hold a share about 56%. North America is the largest market, with a share about 34% in the world, followed by China and Europe with the same share about 26%. and 29%.The major players in China SiC Substrates market include Cree(Wolfspeed) , II‐VI Advanced Materials, TankeBlue Semiconductor, etc. The top 3 players hold about 80% of the whole market shares. East China and South China are main markets for SiC Substrates, which hold a share about 80%.
This report aims to provide a comprehensive presentation of the global market for SiC Substrates, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding SiC Substrates.
Report Scope
The SiC Substrates market size, estimations, and forecasts are provided in terms of output/shipments (K Units) and revenue ($ millions), considering 2023 as the base year, with history and forecast data for the period from 2019 to 2030. This report segments the global SiC Substrates market comprehensively. Regional market sizes, concerning products by Inch, by Application, and by players, are also provided.
For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.
The report will help the SiC Substrates manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by Inch, by Application, and by regions.
Market Segmentation
By Company
Cree (Wolfspeed)
II-VI Advanced Materials
TankeBlue Semiconductor
SICC Materials
Beijing Cengol Semiconductor
Showa Denko (NSSMC)
Hebei Synlight Crystal
Norstel
ROHM
SK Siltron
Segment by Inch
4 Inch
6 Inch
8 Inch
Segment by Application
Power component
RF device
Others
Production by Region
North America
Europe
China
Japan
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
China Taiwan
Southeast Asia
India
Latin America, Middle East & Africa
Mexico
Brazil
Turkey
GCC Countries
Chapter Outline
Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by region, by Inch, by Application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.
Chapter 2: Detailed analysis of SiC Substrates manufacturers competitive landscape, price, production and value market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Production/output, value of SiC Substrates by region/country. It provides a quantitative analysis of the market size and development potential of each region in the next six years.
Chapter 4: Consumption of SiC Substrates in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.
Chapter 5: Provides the analysis of various market segments by Inch, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 6: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: The main points and conclusions of the report.
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.
SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.
Alpha silicon carbide (α-SiC) is the most commonly encountered polymorph; it is formed at temperatures greater than 1700 °C and has a hexagonal crystal structure (similar to Wurtzite). The beta modification (β-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperatures below 1700 °C. Until recently, the beta form has had relatively few commercial uses, although there is now increasing interest in its use as a support for heterogeneous catalysts, owing to its higher surface area compared to the alpha form.
For now, the main application of silicon carbide substrate in LED solid-state lighting field and high-frequency devices
As the basic material of the third generation semiconductor industry, silicon carbide substrate has a high application prospect and industrial value, and has an important strategic position in the development of China's semiconductor industry. For a long time, the core technology and market of silicon carbide substrate are basically monopolized by developed countries in Europe and the United States, and the larger the product size, the higher the level of technical parameters, the more obvious its technical advantages. China's silicon carbide crystal research only started in the late 1990s, and failed to achieve industrialization due to technical bottlenecks and capacity limits in the early stage of development, which is far behind the international advanced level. Since the beginning of the 21st century, under the support and guidance of the national industrial policy, the development of China's silicon carbide wafer industry has been greatly accelerated. Excellent silicon carbide substrate manufacturing enterprises with independent intellectual property rights such as Tianke Heda and Shandong Tianyue have emerged successively. Domestic enterprises to technology-driven development, deep cultivation of silicon carbide wafer and crystal manufacturing, gradually master 2 inches to 6 inches of silicon carbide crystal and wafer manufacturing technology, break the domestic silicon carbide wafer manufacturing technology gap and gradually narrow the technology gap with the developed countries.
The global SiC Substrates market was valued at US$ 567.4 million in 2023 and is anticipated to reach US$ 1824 million by 2030, witnessing a CAGR of 17.6% during the forecast period 2024-2030.
Global core SiC substrates players include Cree (Wolfspeed), II-VI Advanced Materials and ROHM etc. The top 5 companies hold a share about 56%. North America is the largest market, with a share about 34% in the world, followed by China and Europe with the same share about 26%. and 29%.The major players in China SiC Substrates market include Cree(Wolfspeed) , II‐VI Advanced Materials, TankeBlue Semiconductor, etc. The top 3 players hold about 80% of the whole market shares. East China and South China are main markets for SiC Substrates, which hold a share about 80%.
This report aims to provide a comprehensive presentation of the global market for SiC Substrates, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding SiC Substrates.
Report Scope
The SiC Substrates market size, estimations, and forecasts are provided in terms of output/shipments (K Units) and revenue ($ millions), considering 2023 as the base year, with history and forecast data for the period from 2019 to 2030. This report segments the global SiC Substrates market comprehensively. Regional market sizes, concerning products by Inch, by Application, and by players, are also provided.
For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.
The report will help the SiC Substrates manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by Inch, by Application, and by regions.
Market Segmentation
By Company
Cree (Wolfspeed)
II-VI Advanced Materials
TankeBlue Semiconductor
SICC Materials
Beijing Cengol Semiconductor
Showa Denko (NSSMC)
Hebei Synlight Crystal
Norstel
ROHM
SK Siltron
Segment by Inch
4 Inch
6 Inch
8 Inch
Segment by Application
Power component
RF device
Others
Production by Region
North America
Europe
China
Japan
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
China Taiwan
Southeast Asia
India
Latin America, Middle East & Africa
Mexico
Brazil
Turkey
GCC Countries
Chapter Outline
Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by region, by Inch, by Application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.
Chapter 2: Detailed analysis of SiC Substrates manufacturers competitive landscape, price, production and value market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Production/output, value of SiC Substrates by region/country. It provides a quantitative analysis of the market size and development potential of each region in the next six years.
Chapter 4: Consumption of SiC Substrates in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.
Chapter 5: Provides the analysis of various market segments by Inch, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 6: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: The main points and conclusions of the report.
Index1 SiC Substrates Market Overview
1.1 Product Definition
1.2 SiC Substrates Segment by Inch
1.2.1 Global SiC Substrates Market Value Growth Rate Analysis by Inch 2023 VS 2030
1.2.2 4 Inch
1.2.3 6 Inch
1.2.4 8 Inch
1.3 SiC Substrates Segment by Application
1.3.1 Global SiC Substrates Market Value Growth Rate Analysis by Application: 2023 VS 2030
1.3.2 Power component
1.3.3 RF device
1.3.4 Others
1.4 Global Market Growth Prospects
1.4.1 Global SiC Substrates Production Value Estimates and Forecasts (2019-2030)
1.4.2 Global SiC Substrates Production Capacity Estimates and Forecasts (2019-2030)
1.4.3 Global SiC Substrates Production Estimates and Forecasts (2019-2030)
1.4.4 Global SiC Substrates Market Average Price Estimates and Forecasts (2019-2030)
1.5 Assumptions and Limitations
2 Market Competition by Manufacturers
2.1 Global SiC Substrates Production Market Share by Manufacturers (2019-2024)
2.2 Global SiC Substrates Production Value Market Share by Manufacturers (2019-2024)
2.3 Global Key Players of SiC Substrates, Industry Ranking, 2022 VS 2023 VS 2024
2.4 Global SiC Substrates Market Share by Company Type (Tier 1, Tier 2 and Tier 3)
2.5 Global SiC Substrates Average Price by Manufacturers (2019-2024)
2.6 Global Key Manufacturers of SiC Substrates, Manufacturing Base Distribution and Headquarters
2.7 Global Key Manufacturers of SiC Substrates, Product Offered and Application
2.8 Global Key Manufacturers of SiC Substrates, Date of Enter into This Industry
2.9 SiC Substrates Market Competitive Situation and Trends
2.9.1 SiC Substrates Market Concentration Rate
2.9.2 Global 5 and 10 Largest SiC Substrates Players Market Share by Revenue
2.10 Mergers & Acquisitions, Expansion
3 SiC Substrates Production by Region
3.1 Global SiC Substrates Production Value Estimates and Forecasts by Region: 2019 VS 2023 VS 2030
3.2 Global SiC Substrates Production Value by Region (2019-2030)
3.2.1 Global SiC Substrates Production Value Market Share by Region (2019-2024)
3.2.2 Global Forecasted Production Value of SiC Substrates by Region (2025-2030)
3.3 Global SiC Substrates Production Estimates and Forecasts by Region: 2019 VS 2023 VS 2030
3.4 Global SiC Substrates Production by Region (2019-2030)
3.4.1 Global SiC Substrates Production Market Share by Region (2019-2024)
3.4.2 Global Forecasted Production of SiC Substrates by Region (2025-2030)
3.5 Global SiC Substrates Market Price Analysis by Region (2019-2024)
3.6 Global SiC Substrates Production and Value, Year-over-Year Growth
3.6.1 North America SiC Substrates Production Value Estimates and Forecasts (2019-2030)
3.6.2 Europe SiC Substrates Production Value Estimates and Forecasts (2019-2030)
3.6.3 China SiC Substrates Production Value Estimates and Forecasts (2019-2030)
3.6.4 Japan SiC Substrates Production Value Estimates and Forecasts (2019-2030)
4 SiC Substrates Consumption by Region
4.1 Global SiC Substrates Consumption Estimates and Forecasts by Region: 2019 VS 2023 VS 2030
4.2 Global SiC Substrates Consumption by Region (2019-2030)
4.2.1 Global SiC Substrates Consumption by Region (2019-2024)
4.2.2 Global SiC Substrates Forecasted Consumption by Region (2025-2030)
4.3 North America
4.3.1 North America SiC Substrates Consumption Growth Rate by Country: 2019 VS 2023 VS 2030
4.3.2 North America SiC Substrates Consumption by Country (2019-2030)
4.3.3 U.S.
4.3.4 Canada
4.4 Europe
4.4.1 Europe SiC Substrates Consumption Growth Rate by Country: 2019 VS 2023 VS 2030
4.4.2 Europe SiC Substrates Consumption by Country (2019-2030)
4.4.3 Germany
4.4.4 France
4.4.5 U.K.
4.4.6 Italy
4.4.7 Russia
4.5 Asia Pacific
4.5.1 Asia Pacific SiC Substrates Consumption Growth Rate by Region: 2019 VS 2023 VS 2030
4.5.2 Asia Pacific SiC Substrates Consumption by Region (2019-2030)
4.5.3 China
4.5.4 Japan
4.5.5 South Korea
4.5.6 China Taiwan
4.5.7 Southeast Asia
4.5.8 India
4.6 Latin America, Middle East & Africa
4.6.1 Latin America, Middle East & Africa SiC Substrates Consumption Growth Rate by Country: 2019 VS 2023 VS 2030
4.6.2 Latin America, Middle East & Africa SiC Substrates Consumption by Country (2019-2030)
4.6.3 Mexico
4.6.4 Brazil
4.6.5 Turkey
5 Segment by Inch
5.1 Global SiC Substrates Production by Inch (2019-2030)
5.1.1 Global SiC Substrates Production by Inch (2019-2024)
5.1.2 Global SiC Substrates Production by Inch (2025-2030)
5.1.3 Global SiC Substrates Production Market Share by Inch (2019-2030)
5.2 Global SiC Substrates Production Value by Inch (2019-2030)
5.2.1 Global SiC Substrates Production Value by Inch (2019-2024)
5.2.2 Global SiC Substrates Production Value by Inch (2025-2030)
5.2.3 Global SiC Substrates Production Value Market Share by Inch (2019-2030)
5.3 Global SiC Substrates Price by Inch (2019-2030)
6 Segment by Application
6.1 Global SiC Substrates Production by Application (2019-2030)
6.1.1 Global SiC Substrates Production by Application (2019-2024)
6.1.2 Global SiC Substrates Production by Application (2025-2030)
6.1.3 Global SiC Substrates Production Market Share by Application (2019-2030)
6.2 Global SiC Substrates Production Value by Application (2019-2030)
6.2.1 Global SiC Substrates Production Value by Application (2019-2024)
6.2.2 Global SiC Substrates Production Value by Application (2025-2030)
6.2.3 Global SiC Substrates Production Value Market Share by Application (2019-2030)
6.3 Global SiC Substrates Price by Application (2019-2030)
7 Key Companies Profiled
7.1 Cree (Wolfspeed)
7.1.1 Cree (Wolfspeed) SiC Substrates Corporation Information
7.1.2 Cree (Wolfspeed) SiC Substrates Product Portfolio
7.1.3 Cree (Wolfspeed) SiC Substrates Production, Value, Price and Gross Margin (2019-2024)
7.1.4 Cree (Wolfspeed) Main Business and Markets Served
7.1.5 Cree (Wolfspeed) Recent Developments/Updates
7.2 II-VI Advanced Materials
7.2.1 II-VI Advanced Materials SiC Substrates Corporation Information
7.2.2 II-VI Advanced Materials SiC Substrates Product Portfolio
7.2.3 II-VI Advanced Materials SiC Substrates Production, Value, Price and Gross Margin (2019-2024)
7.2.4 II-VI Advanced Materials Main Business and Markets Served
7.2.5 II-VI Advanced Materials Recent Developments/Updates
7.3 TankeBlue Semiconductor
7.3.1 TankeBlue Semiconductor SiC Substrates Corporation Information
7.3.2 TankeBlue Semiconductor SiC Substrates Product Portfolio
7.3.3 TankeBlue Semiconductor SiC Substrates Production, Value, Price and Gross Margin (2019-2024)
7.3.4 TankeBlue Semiconductor Main Business and Markets Served
7.3.5 TankeBlue Semiconductor Recent Developments/Updates
7.4 SICC Materials
7.4.1 SICC Materials SiC Substrates Corporation Information
7.4.2 SICC Materials SiC Substrates Product Portfolio
7.4.3 SICC Materials SiC Substrates Production, Value, Price and Gross Margin (2019-2024)
7.4.4 SICC Materials Main Business and Markets Served
7.4.5 SICC Materials Recent Developments/Updates
7.5 Beijing Cengol Semiconductor
7.5.1 Beijing Cengol Semiconductor SiC Substrates Corporation Information
7.5.2 Beijing Cengol Semiconductor SiC Substrates Product Portfolio
7.5.3 Beijing Cengol Semiconductor SiC Substrates Production, Value, Price and Gross Margin (2019-2024)
7.5.4 Beijing Cengol Semiconductor Main Business and Markets Served
7.5.5 Beijing Cengol Semiconductor Recent Developments/Updates
7.6 Showa Denko (NSSMC)
7.6.1 Showa Denko (NSSMC) SiC Substrates Corporation Information
7.6.2 Showa Denko (NSSMC) SiC Substrates Product Portfolio
7.6.3 Showa Denko (NSSMC) SiC Substrates Production, Value, Price and Gross Margin (2019-2024)
7.6.4 Showa Denko (NSSMC) Main Business and Markets Served
7.6.5 Showa Denko (NSSMC) Recent Developments/Updates
7.7 Hebei Synlight Crystal
7.7.1 Hebei Synlight Crystal SiC Substrates Corporation Information
7.7.2 Hebei Synlight Crystal SiC Substrates Product Portfolio
7.7.3 Hebei Synlight Crystal SiC Substrates Production, Value, Price and Gross Margin (2019-2024)
7.7.4 Hebei Synlight Crystal Main Business and Markets Served
7.7.5 Hebei Synlight Crystal Recent Developments/Updates
7.8 Norstel
7.8.1 Norstel SiC Substrates Corporation Information
7.8.2 Norstel SiC Substrates Product Portfolio
7.8.3 Norstel SiC Substrates Production, Value, Price and Gross Margin (2019-2024)
7.8.4 Norstel Main Business and Markets Served
7.7.5 Norstel Recent Developments/Updates
7.9 ROHM
7.9.1 ROHM SiC Substrates Corporation Information
7.9.2 ROHM SiC Substrates Product Portfolio
7.9.3 ROHM SiC Substrates Production, Value, Price and Gross Margin (2019-2024)
7.9.4 ROHM Main Business and Markets Served
7.9.5 ROHM Recent Developments/Updates
7.10 SK Siltron
7.10.1 SK Siltron SiC Substrates Corporation Information
7.10.2 SK Siltron SiC Substrates Product Portfolio
7.10.3 SK Siltron SiC Substrates Production, Value, Price and Gross Margin (2019-2024)
7.10.4 SK Siltron Main Business and Markets Served
7.10.5 SK Siltron Recent Developments/Updates
8 Industry Chain and Sales Channels Analysis
8.1 SiC Substrates Industry Chain Analysis
8.2 SiC Substrates Key Raw Materials
8.2.1 Key Raw Materials
8.2.2 Raw Materials Key Suppliers
8.3 SiC Substrates Production Mode & Process
8.4 SiC Substrates Sales and Marketing
8.4.1 SiC Substrates Sales Channels
8.4.2 SiC Substrates Distributors
8.5 SiC Substrates Customers
9 SiC Substrates Market Dynamics
9.1 SiC Substrates Industry Trends
9.2 SiC Substrates Market Drivers
9.3 SiC Substrates Market Challenges
9.4 SiC Substrates Market Restraints
10 Research Finding and Conclusion
11 Methodology and Data Source
11.1 Methodology/Research Approach
11.1.1 Research Programs/Design
11.1.2 Market Size Estimation
11.1.3 Market Breakdown and Data Triangulation
11.2 Data Source
11.2.1 Secondary Sources
11.2.2 Primary Sources
11.3 Author List
11.4 Disclaimer
Published By : QY Research
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